C = ε0 · εr · A/d; E = ½·C·V²
Capacitance grows with plate area and dielectric constant and falls with plate spacing.
Capacitance grows with plate area and dielectric constant and falls with plate spacing.
Select a target and calculate.
Capacitance grows with plate area and dielectric constant and falls with plate spacing.
A 100 cm² plate area, 1 mm spacing and air (εr = 1) give C ≈ 88.5 pF; at 100 V this stores about 8.85 nC of charge (Q = C·V) and 0.443 µJ of energy.
Uniform field between infinitely extended parallel plates without fringing; lossless dielectric.
This calculator finds the capacitance of a parallel-plate capacitor from plate area, spacing and dielectric, along with the charge and energy stored at an applied voltage.
A capacitor stores a charge Q = C·U proportional to the applied voltage U. For an idealized parallel-plate capacitor with plate area A and spacing d, capacitance follows from C = ε0·εr·A/d, where ε0 is the electric constant of vacuum and εr is the relative permittivity of the material between the plates.
Picture the parallel-plate capacitor as a flat, elastic water reservoir: a larger area holds more water (charge) at the same pressure (voltage), while a larger gap between the plates lowers capacitance, similar to a thinner, more elastic reservoir holding less volume at the same pressure. The dielectric between the plates further raises capacitance, similar to a material that yields more easily to the electric field.
C = ε0 · εr · A/d; E = ½·C·V²
C = ε0·εr·A/dQ = C·UE = ½·C·U²| Symbol / input | Meaning |
|---|---|
| Capacitance C | Capacitance of the idealized parallel-plate capacitor. |
| Plate area A | Overlapping area of the two electrodes. |
| Plate spacing d | Distance between electrodes, filled by the dielectric. |
| Relative permittivity εr | Dielectric material property; air/vacuum = 1, many plastics 2–4, some ceramics much higher. |
| Applied voltage V | Voltage across the plates, if the capacitor is charged. |
| Stored energy Estore | Energy stored in the electric field at the applied voltage V. |
Plate area A, spacing d and relative permittivity εr set the capacitance; adding a voltage U gives stored charge and energy. εr = 1 corresponds to air or vacuum; for solid dielectrics such as ceramic or plastic film, use current manufacturer data since εr is strongly material-dependent.
Select the target quantity. For capacitance, enter A, d and εr; for stored energy, additionally enter voltage U. To find the plate spacing or area needed for a target capacitance instead, choose that quantity as the target.
A 100 cm² plate area, 1 mm spacing and air as dielectric (εr = 1) give C = 8.854·10⁻¹² · 1 · 0.01 m² / 0.001 m ≈ 88.5 pF. At 100 V this stores Q = C·U ≈ 8.85 nC of charge and E = ½·C·U² ≈ 0.443 µJ of energy.
A capacitance of 88.5 pF is typical for small discrete air or trimmer capacitors; practical filter or bypass capacitors in the nanofarad-to-microfarad range instead need either far larger areas, much smaller spacings, or — usually more economically — a high-permittivity dielectric such as ceramic.
Plate area is often given in cm², spacing in mm, and the resulting capacitance falls in the picofarad-to-nanofarad range for typical lab-scale dimensions; stored energy is usually given in µJ or mJ.
The formula C = ε0·εr·A/d assumes the electric field is uniform only in the region between the plates, as if the plates were infinitely large. At the real, finite plate edges the field bulges outward (fringing), which slightly raises actual capacitance above the bare formula. This effect grows as spacing increases relative to the plate dimensions, and is usually negligible in practice when spacing stays small compared with plate area.
The relationship explains how trimmer and variable capacitors work, how capacitive sensors translate a change in d or A into a capacitance change (for example proximity or pressure sensors), and supports basic sizing of PCB capacitor structures.
The model assumes a uniform electric field confined to the region between infinitely extended, exactly parallel plates. Real capacitors with finite plate area show additional fringing-field effects at the edges that slightly increase actual capacitance above this model, especially when spacing is not small compared with the plate dimensions. Dissipation factor, temperature effects on εr and parasitic capacitance of neighboring traces are not included.
Common mistake: A common mistake in manual hand calculation is not converting units consistently to SI — the formula needs A in m² and d in m (the calculator handles this conversion automatically). It is also easy to overlook that εr is in reality frequency- and temperature-dependent, and catalog values usually apply only over a specific frequency range.
It describes how much electric charge a device can store per volt of applied voltage; a farad is a very large unit, so practical capacitors typically range from picofarads to millifarads.
Because a larger area can hold more charge at the same electric field strength — similar to a larger water reservoir holding more water at the same pressure.
A dielectric with εr greater than 1 polarizes in the electric field, weakening the effective field for a given charge, so more charge can be stored at the same voltage — capacitance rises proportionally with εr.
Charge Q = C·U grows linearly with voltage, while stored energy E = ½·C·U² grows with the square of voltage — doubling voltage quadruples stored energy at the same capacitance.
Approximately, for small spacing relative to area; real components additionally show fringing-field effects, losses from the dissipation factor, and temperature and frequency dependence of εr not captured here.